october 1998 FDS6675 single p-channel, logic level, powertrench tm mosfet general description features absolute maximum ratings t a = 25 o c unless otherwise noted symbol parameter fds667 5 units v dss drain-source voltage -30 v v gss gate-source voltage 20 v i d drain current - continuous (note 1a) -11 a - pulsed -50 p d power dissipation for single operation (note 1a) 2.5 w (note 1b) 1.2 (note 1c) 1 t j ,t stg operating and storage temperature range -55 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a ) 50 c/w r q jc thermal resistance, junction-to-case (note 1) 25 c/w FDS6675 rev.c1 -11 a, -3 0 v. r ds(on ) = 0.014 w @ v gs = -10 v , r ds(on ) = 0.020 w @ v gs = -4.5 v . low gate charge (30nc typical). high performance trench technology for extremely low r ds(on) . high power and current handling capability. sot-23 supersot t m -8 soic-16 so-8 sot-223 supersot t m -6 this p -channel logic level mosfet is produced using fairchild semiconductor 's advanced powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance . these devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and dc/ dc conversion. 5 6 7 3 1 8 4 2 s d s s so-8 d d d g pin 1 fds 6675 ? 1998 fairchild semiconductor corporation
electrical characteristics ( t a = 25 o c unless otherwise noted ) symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -30 v d bv dss / d t j breakdown voltage temp. coefficient i d = -250 a , referenced to 25 o c -22 mv/ o c i dss zero gate voltage drain current v ds = -24 v, v gs = 0 v -1 a t j = 5 5c -10 a i gssf gate - body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate - body leakage, reverse v gs = -20 v, v ds = 0 v -100 na on characteristics (note 2 ) v gs (th) gate threshold voltage v ds = v gs , i d = -250 a -1 -1.7 -3 v d v gs(th) / d t j gate threshold voltage temp. coefficient i d = 250 a , referenced to 25 o c 4.3 mv/ o c r ds(on) static drain-source on-resistance v gs = -10 v, i d = -11 a 0.011 0.014 w t j =12 5c 0.016 0.023 v gs = -4.5 v, i d = -9 a 0.015 0.02 i d(on) on-state drain current v gs = -10 v, v ds = -5 v -50 a g fs forward transconductance v ds = -10 v, i d = -11 a 32 s dynamic characteristics c iss input capacitance v ds = -15 v, v gs = 0 v, f = 1.0 mhz 3000 pf c oss output capacitance 870 pf c rss reverse transfer capacitance 360 pf switching ch aracteristics (note 2) t d(on ) turn - on delay time v ds = -15 v, i d = -1 a 12 22 ns t r turn - on rise time v gen = -10 v, r gen = 6 w 16 27 ns t d(off) turn - off delay time 50 80 ns t f turn - off fall time 100 140 ns q g total gate charge v ds = -15 v, i d = -11 a, 30 42 nc q gs gate-source charge v gs = -5 v 9 nc q gd gate-drain charge 11 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -2.1 a v sd drain-source diode forward voltage v gs = 0 v, i s = -2.1 a (note 2 ) -0.72 -1.2 v notes: 1 . r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300s, duty cycle < 2.0%. FDS6675 rev.c1 c. 125 o c/w on a 0.006 in 2 pad of 2oz copper. b . 10 5 o c/w on a 0.04 in 2 pad of 2oz copper. a . 50 o c/w on a 1 in 2 pad of 2oz copper.
FDS6675 rev.c1 typical electrical characteristics figure 1. on-region characteristics . figure 2. on-resistance variation with dain current and gate voltage . figure 3. on-resistance variation with temperature . figure 5 . transfer characteristics. figure 6 . body diode forward voltage varia tion with source current and temperature. figure 4 . on-resistance variation with gate-to -source voltage. 0 0.6 1.2 1.8 2.4 3 0 10 20 30 40 50 - v , drain-source voltage (v) - i , drain-source current (a) ds d -6.0v -3.5v -3.0v v =-10v gs -4.5v 0 10 20 30 40 50 0.5 1 1.5 2 2.5 - i , drain current (a) drain-source on-resistance d v = -3.5v gs r , normalized ds(on) -10v -7.0v -4.0v -5.5v -4.5 v 0 2 4 6 8 10 0 0.01 0.02 0.03 0.04 0.05 - v , gate to source voltage (v) gs r , on-resistance (ohm) ds(on) 25c i =-5.5a d t =125c j 1 2 3 4 5 0 10 20 30 40 50 - v , gate to source voltage (v) - i , drain current (a) v =-5.0v ds gs d t =-55c j 125c 25c 0 0.4 0.8 1.2 0.001 0.01 0.1 1 10 50 - v , body diode forward voltage (v) - i , reverse drain current (a) 25c -55c v = 0v gs sd s t =125c j -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 t , junction temperature (c) drain-source on-resistance j r , normalized ds(on) v = -10v gs i = -11a d
FDS6675 rev.c1 typical electrical characteristics (continued) figure 10. single pulse maximum power dissipation . figure 8. capacitance characteristics . figure 7 . gate charge characteristics. figure 9. maximum safe operating area . figure 11 . transient thermal response curve . thermal characterization performed using the conditions described in n ote 1c. transient thermal response will change depending on the circuit board design. 0 12 24 36 48 60 0 2 4 6 8 10 q , gate charge (nc) - v , gate-source voltage (v) g gs i =-11a d v =-5v ds -10v -15v 0.1 0.2 0.5 1 2 5 10 20 30 100 200 500 1000 2000 4000 6000 - v , drain to source voltage (v) capacitance (pf) ds c iss f = 1 mhz v = 0 v gs c oss c rss 0.05 0.1 0.3 1 3 10 30 50 0.01 0.05 0.5 3 10 30 100 - v , drain-source voltage (v) - i , drain current (a) rds(on) limit d dc ds 1s v =-10v single pulse r =125c/w t = 25c q ja gs a 100ms 10ms 1ms 10s 100us 0.001 0.01 0.1 1 10 100 300 0 10 20 30 40 50 single pulse time (sec) power (w) single pulse r =125c/w t = 25c q ja a 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , time (sec) transient thermal resistance r(t), normalized effective 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 duty cycle, d = t /t 1 2 r (t) = r(t) * r r = 125c/w q ja q ja q ja t - t = p * r (t) q ja a j p(pk) t 1 t 2
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